The Silicon carbide sintering furnace is a batch-type resistance heating furnace primarily used for pressureless Silicon carbide sintering, as well as in the cemented carbide and powder metallurgy industries for producing metal powders and composite powders such as tungsten carbide (WC), chromium carbide (Cr₃C₂), titanium carbide (TiC), and vanadium carbide (VC). After cold pressing, these materials undergo sintering treatment. The system supports up to 200 distinct process heating curves.
Product Advantages
1 Intelligent Temperature Control:
● Equipped with a PID-based intelligent digital temperature controller featuring advanced digital display and smart control technology.
● Reduces reading errors and manual operation deviations, significantly improving workflow efficiency.
2 Durable Furnace Design:
● Utilizes high-temperature insulation materials for the furnace chamber, ensuring long-term durability.
●Optimized thermal insulation maintains low external surface temperatures during prolonged operation.

Applications
● Production of silicon carbide powder and silicon carbide sealing ceramics.
● Pressureless sintering of silicon carbide.
● Manufacturing of metal powders and composites (e.g., TiC, VC, WC) for cemented carbide and powder metallurgy applications.
Technical Specifications
1 Maximum Operating Temperature: 2500°C
2 High-Temperature Zone Volume:
Options: 0.01m³, 0.02m³, 0.03m³, 0.05m³, 0.1m³, 0.15m³, 0.2m³, 0.3m³, 0.5m³, 0.6m³, 0.8m³, 1m³
3 Atmosphere Compatibility:
●Hydrogen (H₂), nitrogen (N₂), inert gases, etc.
4 Temperature Uniformity: ≤±10°C
5 Temperature Measurement:
●Below 1800°C: Tungsten-rhenium (W-Re) thermocouples.
●Above 1800°C: Infrared optical pyrometer (measuring range: 1000–3000°C; accuracy: 0.2–0.75%).
6 Temperature Control:
●Programmable or manual control modes.
●Control accuracy: ±1°C.
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